Datasheet4U Logo Datasheet4U.com

2SJ197 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-1.5 A.
  • RDS(ON) ＜ 1Ω (VGS =-10V).
  • RDS(ON) ＜ 1.5Ω (VGS =-4V).
  • Comp;ementary to 2SK1483 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% Symbol Rating Unit VDS -60 V VGS ±20 ID 1.5.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ197 P-Channel MOSFET NEC
2SJ197 60V P-Channel MOSFET VBsemi
2SJ190 P-Channel MOSFET Sanyo Semicon Device
2SJ191 P-Channel MOSFET Sanyo Semicon Device
2SJ192 P-Channel MOSFET Sanyo Semicon Device

Other Datasheets by Kexin Semiconductor

Part Number Description
2SJ199 P-Channel MOSFET
2SJ130S P-Channel MOSFET
2SJ166 P-Channel MOSFET
2SJ179 P-Channel MOSFET
2SJ181S P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type P-Channel MOSFET 2SJ197 MOSFET ■ Features ● VDS (V) =-60V ● ID =-1.5 A ● RDS(ON) ＜ 1Ω (VGS =-10V) ● RDS(ON) ＜ 1.5Ω (VGS =-4V) ● Comp;ementary to 2SK1483 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% Symbol Rating Unit VDS -60 V VGS ±20 ID 1.