High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A)
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) Base current Collector power dissipation Ta = 25 TC = 25 Jun.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
Silicon NPN Triple Diffused Type 2SC5356
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A)
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 900 800 7 3 5 1 1.
2SC5356 Datasheet
