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2SC5355 - Silicon NPN Transistor

Key Features

  • Excellent switching times: tr = 0.5 ìs (max), tf = 0.3 ìs (max) +0.2 9.70 -0.2 High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) Base curre.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Transistors Silicon NPN Triple Diffused Mesa Type 2SC5355 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Excellent switching times: tr = 0.5 ìs (max), tf = 0.3 ìs (max) +0.2 9.70 -0.2 High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.