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2SC4695 - NPN Epitaxial Planar Silicon Transistors

Features

  • 3 High reverse hFE (150 typ). Small ON resistance [Ron=1W (IB=5mA)]. +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 20 25 500 800 100 250 150 -55 to +150 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.

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SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4695 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. +0.1 2.4-0.1 High DC current gain. High VEBO (VEBO 25V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 High reverse hFE (150 typ). Small ON resistance [Ron=1W (IB=5mA)]. +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 20 25 500 800 100 250 150 -55 to +150 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.
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