Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V). High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 20 25 500 800 100 150 150 -55 to +150 Unit V.
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SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistors 2SC4694
Features
Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).
High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)].
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 20 25 500 800 100 150 150 -55 to +150 Unit V V V mA mA mA mW
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2SC4694 Datasheet
