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2SB1628 - PNP Silicon Epitaxial Transistor

Key Features

  • High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse).
  • Base Current (DC) Base Current (pulse).
  • Total Power Dissipation Junction Temperature Storage temperature.
  • PW 10 ms, Duty Cycle 50% Symbol VCBO VCEO VEBO IC(DC) Ic(Pulse) IB(DC) IB(Pulse) PT Tj Tstg Rating -20 -16 -6 -3 -5 -0.2 -0.4 2 150 -55 to +150 Un.

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SMD Type PNP Silicon Epitaxial Transistor 2SB1628 Transistors Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) * Base Current (DC) Base Current (pulse) * Total Power Dissipation Junction Temperature Storage temperature * PW 10 ms, Duty Cycle 50% Symbol VCBO VCEO VEBO IC(DC) Ic(Pulse) IB(DC) IB(Pulse) PT Tj Tstg Rating -20 -16 -6 -3 -5 -0.2 -0.4 2 150 -55 to +150 Unit V V V A A A A W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.