Absolute Maximum Ratings (Ta = 25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tp=10μs) Power Dissipation (Note 1) Thermal Resistance. Junction- to-Ambient (Note 1) Junction Temperature Storage Temperature Range
Symbol VDS VGS ID.
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SMD Type
N-Channel MOSFET 2KK5129
■ Features
● VDS (V) = 30 V ● ID = 300 mA ● RDS(ON) < 1.1 Ω (VGS = 4.5V) ● Very fast switching ● Ultra low voltage drive (2.5V drive)
3
1 2
MOSFET
1.Gate 2.Source 3.Drain
■ Absolute Maximum Ratings (Ta = 25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tp=10μs) Power Dissipation (Note 1) Thermal Resistance.Junction- to-Ambient (Note 1) Junction Temperature Storage Temperature Range
Symbol VDS VGS ID IDM PD RθJA TJ Tstg
Rating 30 ±12 0.3 1.2 200 625 150
-55 to 150
Unit V
A mW ℃/W ℃
Note 1. Surface mounted on FR4 board using 1 in sq pad size. (Cu area = 1.127 in sq [1 oz] including traces).
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2KK5129 Datasheet
