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2KK5096DFN - N-Channel MOSFET

Key Features

  • s PDFN5x6-8.
  • VDS (V) = 40 V.
  • ID = 100 A.
  • RDS(ON) (at VGS = 10 V) < 3.5 mΩ.
  • RDS(ON) (at VGS = 4.5 V) < 5.3 mΩ.
  • Split Gate Trench Technology.
  • Low Gate Charge.
  • Low Gate Resistance.
  • 100% UIS Tested S1 8D S2 7D S3 6D G4 5D.
  • Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25℃ ID TC = 100℃ IDM Power D.

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Full PDF Text Transcription (Reference)

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SMD Type N-Channel MOSFET 2KK5096DFN MOSFET ■ Features PDFN5x6-8 ● VDS (V) = 40 V ● ID = 100 A ● RDS(ON) (at VGS = 10 V) < 3.5 mΩ ● RDS(ON) (at VGS = 4.5 V) < 5.