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2KK5075DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS = 30 V.
  • ID (at VGS=10V) =36 A.
  • RDS(ON) (at VGS = 10 V) < 3.6 mΩ.
  • RDS(ON) (at VGS = 4.5 V) < 4.7 mΩ PDFN5x6-8 S D S D S D G D.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ±20 Continuous Drain Current (Note 1) TC = 25℃ ID 36 A Pulsed Drain Current (Note 2) IDM 144 Single Pulse Avalanche Current (Note 2) IAS 40 A Single Pulse Avalanche En.

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SMD Type N-Channel MOSFET 2KK5075DFN MOSFET ■ Features ● VDS = 30 V ● ID (at VGS=10V) =36 A ● RDS(ON) (at VGS = 10 V) < 3.6 mΩ ● RDS(ON) (at VGS = 4.5 V) < 4.7 mΩ PDFN5x6-8 S D S D S D G D ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ±20 Continuous Drain Current (Note 1) TC = 25℃ ID 36 A Pulsed Drain Current (Note 2) IDM 144 Single Pulse Avalanche Current (Note 2) IAS 40 A Single Pulse Avalanche Energy L = 0.1mH (Note 2) EAS 80 mJ Thermal Resistance, Junction- to-Ambient (Note3, 4) Thermal Resistance, Junction- to-Case RθJA 55 RθJC 2.5 ℃/W Power Dissipation (Note 4) Power Dissipation (Note 5) TC = 25℃ 50 PD TC = 100℃ 20 W TA = 25℃ 6.