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2KK5066 - Depletion-Mode Power MOSFET

Features

  • ƽ BVDSX = 150 V ƽ IDSS = 200 mA ƽ RDS(ON) < 15 ƽ High-threshold voltage, its typical value as high as -6V ƽ ESD improved Capability ƽ Depletion Mode (Normally On) ƽ Proprietary Advanced Planar Technology ƽ Rugged Polysilicon Gate Cell Structure ƽ Fast Switching Speed +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit : mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain Ƶ Absolute Maximum Rat.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type MOSFET Depletion-Mode Power MOSFET 2KK5066 Ƶ Features ƽ BVDSX = 150 V ƽ IDSS = 200 mA ƽ RDS(ON) < 15 ƽ High-threshold voltage, its typical value as high as -6V ƽ ESD improved Capability ƽ Depletion Mode (Normally On) ƽ Proprietary Advanced Planar Technology ƽ Rugged Polysilicon Gate Cell Structure ƽ Fast Switching Speed +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit : mm 0.15 +0.02 -0.02 1. Gate 2. Source 3.
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