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2KK5056 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 40 V.
  • ID = 60 A.
  • RDS(ON) (at VGS = 10 V) < 8 mΩ.
  • RDS(ON) (at VGS = 4.5 V) < 10.5 mΩ TO-252 D G S MOSFET 23 1 1. Gate (G) 2. Drain (D) 3. Source (S).
  • Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current (Note 1) IDM Single Pulse Avalanche Energy (Note 2) EAS Peak Diode Recovery dv/dt (Note 3) dv/dt Power Dissipation PD.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel MOSFET 2KK5056 ■ Features ● VDS (V) = 40 V ● ID = 60 A ● RDS(ON) (at VGS = 10 V) < 8 mΩ ● RDS(ON) (at VGS = 4.5 V) < 10.5 mΩ TO-252 D G S MOSFET 23 1 1. Gate (G) 2. Drain (D) 3. Source (S) ■ Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current (Note 1) IDM Single Pulse Avalanche Energy (Note 2) EAS Peak Diode Recovery dv/dt (Note 3) dv/dt Power Dissipation PD Thermal Resistance, Junction- to-Ambient RθJA Thermal Resistance, Junction- to-Case RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VDD=25V,L=0.1mH, IAS=53.