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2KK5009 - N-Channel Enhancement MOSFET

Features

  • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 2KV HBM 3 1 2 Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage -Continuous VDS 60 V VGS ±20 Drain Current -Continuous ( Note:1) -Pulsed 440 ID mA 1000 Power Dissipation (Note 1) Thermal Resistance. Junction- to-Ambient Junction Temperature PD 530 mW RthJA 232 /W TJ 150 Storage Tempe.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type MOSFET N-Channel Enhancement MOSFET Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 2KV HBM 3 1 2 Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage -Continuous VDS 60 V VGS ±20 Drain Current -Continuous ( Note:1) -Pulsed 440 ID mA 1000 Power Dissipation (Note 1) Thermal Resistance.Junction- to-Ambient Junction Temperature PD 530 mW RthJA 232 /W TJ 150 Storage Temperature Range Tstg -55 to 150 Notes: 1. Device mounted on FR-4 PCB using 1 square inch pad size, 1oz copper. Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Drain-Source Breakdown Voltage (Note.
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