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2KK5008DS - N-Channel Enhancement MOSFET

Features

  • ƽ VDS (V) = 20V ƽ ID = 4.9 A (VGS =4.5V) ƽ RDS(ON) ˘ 33m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 40m¡ (VGS = 2.5V) ƽ RDS(ON) ˘ 51m¡ (VGS = 1.8V).
  •  6 627       3    ' 1 2        1.6       8QLW PP    .
  • DWH  6RXUFH  'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ =150ć.
  • 1 Ta=25ć Ta.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement MOSFET ,,%4 MOSFET Ƶ Features ƽ VDS (V) = 20V ƽ ID = 4.9 A (VGS =4.5V) ƽ RDS(ON) ˘ 33m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 40m¡ (VGS = 2.5V) ƽ RDS(ON) ˘ 51m¡ (VGS = 1.8V) * 6 627       3    ' 1 2        1.6       8QLW PP     *DWH  6RXUFH  'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ =150ć*1 Ta=25ć Ta=70ć Pulsed Drain Current *2 Avalanche Current *2 Single Avalanche Energy L=0.1mH Power Dissipation *1 Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 tİ5 sec Steady State Thermal Resistance.
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