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2KK5006DS - N-Channel Enhancement MOSFET

Features

  • VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) D    627       3 1 2       G S Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current.
  • Power Dissipation TA=25 TA=70 Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Junction and.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement MOSFET ..'6 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) D    627       3 1 2       G S Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current * Power Dissipation TA=25 TA=70 Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA Rthc TJ, TSTG * Repetitive rating, pulse width limited by junction temperature. Rating 30 12 5.8 4.9 30 1.4 1 125 60 -55 to 150 Unit V V A W /W /W      1.
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