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SMK630D - Advanced N-Ch Power MOSFET

Features

  • High Voltage : BVDSS=200V(Min. ) Low Crss : Crss=24pF(Typ. ) Low gate charge : Qg=12nC(Typ. ) Low RDS(on) : RDS(on)=0.4Ω(Max. ) D Ordering Information Type No. SMK630D Marking SMK630 Package Code TO-252 G S TO-252 Marking Diagram SMK 630 YWW Column 1,2 : Device Code Column 3 : Production Information e. g. ) YWW -. YWW : Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (.

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Datasheet Details

Part number SMK630D
Manufacturer KODENSHI KOREA
File Size 410.27 KB
Description Advanced N-Ch Power MOSFET
Datasheet download datasheet SMK630D Datasheet
Published: |