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SMK0160IS - Advanced N-Ch Power MOSFET

Features

  • Drain-Source breakdown voltage: BVDSS=600V (Min. ).
  • Low gate charge: Qg=3.9nC (Typ. ).
  • Low drain-source On resistance: RDS(on)=11.5Ω (Max. ).
  • 100% avalanche tested.
  • RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0160 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=2.

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Datasheet Details

Part number SMK0160IS
Manufacturer KODENSHI KOREA
File Size 482.23 KB
Description Advanced N-Ch Power MOSFET
Datasheet download datasheet SMK0160IS Datasheet

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Full PDF Text Transcription

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SMK0160IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=600V (Min.) • Low gate charge: Qg=3.9nC (Typ.) • Low drain-source On resistance: RDS(on)=11.5Ω (Max.) • 100% avalanche tested • RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0160 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -.
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