KIA50N06
Description
The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching
2. Features
RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30n C) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability
3. Pin configuration
Pin 1 2 3
Function Gate Drain Source
1 of 9
Free Datasheet http://../
50 Amps, 60 Volts N-CHANNEL MOSFET
50N06
SEMICONDUCTORS
6. Absolute maximum ratings
Parameter Drain to source voltage Gate to source voltage TJ=25 ºCID50A Continuous drain current TJ=100 ºCID35A Drain current pulsed (note1)IDM200A Single pulsed avalanche energy (note2)EAS480m J Repetitive avalanche energy (note1)EAR13m J Peak diode recovery dv/dt (note3)dv/dt7V/ns Total power dissipation(TJ=25 ºC)PD130W Derating...
