KIA50N03
Features
- Advanced trench process technology
- High density cell design for ultra low on-resistance
- Fully characterized avalanche voltage and current
2.Applications
- VDSS=30V,RDS(on)=6.5mΩ,ID=50A
- Vds=30V
- RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A
- RDS(ON)=9.5mΩ(Max.),VGS@4.5V,Ids@30A
3. Pin configuration
50N03
Pin Function 1 Gate 2 Drain 3 Source 4 Drain
1 of 3
Rev 1.0 JAN 2014
SEMICONDUCTORS
N-CHANNEL ENHANCEMENT-MODE MOSFET
50N03
4. Maximum ratings and thermal characteristics
Rating
Drain-source voltage
Gate-source voltage
Continuous drain current Pulsed drain current1)
Maximum power dissipation
TA=25°C TA=75°C
Operating junction and storage temperature range
Junction-to-case thermal resistance Junction-to ambient themal rasistance (PCB mount)2)
(Ta=25°C,unless otherwise notes)
Symbol
Value
Unit
VDS 30 V
VGS +20
ID 50 A
IDM 200 A
PD 60 W
PD TJ/TSTG
23 -55 to 150
W...
