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2SD1221 - NPN Transistors

Key Features

  • s.
  • Low collector saturation voltage : VCE (sat) = 0.4 V (typ. ) (IC = 3 A, IB = 0.3 A).
  • High power dissipation: PC = 20 W (Tc = 25°C).
  • Complementary to 2SB906 +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.155 .5 5 -0.15 3.80 Unit: mm +02.65 .25 -0.1 +00.50 .15 -0.15 +01.50 .28 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitt.

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SMD Type Transistors NPN Transistors 2SD1221 ■ Features ● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SB906 +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.155 .5 5 -0.15 3.80 Unit: mm +02.65 .25 -0.1 +00.50 .15 -0.15 +01.50 .28 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta = 25℃ Tc = 25℃ ■ Electrical Characteristics Ta = 25℃ Symbol VCBO VCEO VEBO IC IB PC TJ Tstg 2.3 4 .60 +0.15 -0.