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KTA2017 - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • High Voltage : VCEO=-120V. Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ. ). High hFE: hFE=200 700. Low Noise : NF=1dB(Typ. ), 10dB(Max. ). Complementary to KTC4077.

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Datasheet Details

Part number KTA2017
Manufacturer KEC
File Size 33.55 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTA2017 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=-120V. Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE: hFE=200 700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4077. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -120 -120 -5 -100 -20 100 150 -55 150 UNIT V V V mA mA mW A J G KTA2017 EPITAXIAL PLANAR PNP TRANSISTOR C L E MB M 2 1 NK DIM MILLIMETERS DA B 2.00+_ 0.20 1.25 +_ 0.15 C 0.90 +_ 0.10 3 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00-0.10 L 0.