Full PDF Text Transcription for KTA1281 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KTA1281. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Sp...
View more extracted text
w Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTC3209. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Range Tstg RATING -50 -50 -5 -2 1 150 -55 150 UNIT V V V A W O D KTA1281 EPITAXIAL PLANAR PNP TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1
KTA1281 Datasheet
