Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.4V(Max. ) (IC=-4A) High Current and High fT : IC=-8A, fT=130MHz. Excellent Linearity of hFE High Speed Switching Time. : fT=20nS (Typ. ) Complementary to KTC1804D/L.
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SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. APPLICATION Relay drivers, high-speed inverters, converters, and other general high-current switching app...
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ed inverters, converters, and other general high-current switching applications. FEATURES Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.4V(Max.) (IC=-4A) High Current and High fT : IC=-8A, fT=130MHz. Excellent Linearity of hFE High Speed Switching Time. : fT=20nS (Typ.) Complementary to KTC1804D/L MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse VCBO VCEO VEBO IC ICP Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING -60 -60 -6 -8 -12 1.