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SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
HIGH SPEED RECTIFIER APPLICATION.
FEATURES
ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ). ᴌRepetitive Peak Reverse Voltage : VRRM=200V. ᴌRectifier Stack of Single Phase Center Tap Type.
POLARITY ᴌCC TYPE ᴌCATHODE COMMON
13
ᴌCA TYPE ᴌANODE COMMON
13
22
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
F1B2CCI F1B2CAI
Average Output Rectified
Current (Tc=101ᴱ) (Fig.)
Peak One Cycle Surge Forward Current (Non-Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL VRRM
IO
IFSM Tj Tstg
RATING 200
10 60 (50Hz) 70 (60Hz) -40ᴕ150 -40ᴕ150
UNIT V A
A ᴱ ᴱ
GF B P
A U
E
S
K
T LL
M DD
J
NN T
T
123
C
DIM A
B C
D E F
G RH
J K L
VM N O
P
Q HR
S
T U
V
MILLIMETERS 10.
F1B2CCI Datasheet
