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F1B2CAI - STACK SILICON DIFFUSED DIODE

Download the F1B2CAI datasheet PDF. This datasheet also covers the F1B2CCI variant, as both devices belong to the same stack silicon diffused diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ). ᴌRepetitive Peak Reverse Voltage : VRRM=200V. ᴌRectifier Stack of Single Phase Center Tap Type.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F1B2CCI-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F1B2CAI
Manufacturer KEC
File Size 74.04 KB
Description STACK SILICON DIFFUSED DIODE
Datasheet download datasheet F1B2CAI Datasheet

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Other Datasheets by KEC

Part Number Description
F1B2CA DIODE
F1B2CC DIODE
F1B2CCI STACK SILICON DIFFUSED DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA F1B2CCI/CAI STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. FEATURES ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ). ᴌRepetitive Peak Reverse Voltage : VRRM=200V. ᴌRectifier Stack of Single Phase Center Tap Type. POLARITY ᴌCC TYPE ᴌCATHODE COMMON 13 ᴌCA TYPE ᴌANODE COMMON 13 22 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Repetitive Peak Reverse Voltage F1B2CCI F1B2CAI Average Output Rectified Current (Tc=101ᴱ) (Fig.) Peak One Cycle Surge Forward Current (Non-Repetitive) Junction Temperature Storage Temperature Range SYMBOL VRRM IO IFSM Tj Tstg RATING 200 10 60 (50Hz) 70 (60Hz) -40ᴕ150 -40ᴕ150 UNIT V A A ᴱ ᴱ GF B P A U E S K T LL M DD J NN T T 123 C DIM A B C D E F G RH J K L VM N O P Q HR S T U V MILLIMETERS 10.