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Features
* Small surface mounting type * Low reverse current and low forward voltage * High reliability * For high speed switching and detection applications * Marking Code: "D"
RB751S-40
Silicon Epitaxial Planar Schottky Barrier Diode
A C
B DE
G F
SOD-523F
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.059
0.067
1.50
1.70
B
0.030
0.033
0.75
0.85
C
0.045
0.049
1.15
1.25
D
0.012
0.016
0.30
0.40
E
0.024
0.028
0.60
0.70
F
0.004
0.005
0.10
0.14
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz, 1 Cycle) Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFSM Tj Tstg
Value 40 30 30 200 125
- 40 to + 125
Unit V V mA mA ℃ ℃
Version: 6.1
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RB751S-40 Datasheet
