Datasheet4U Logo Datasheet4U.com

CJPF55P30 - P-Channel MOSFET

Description

The CJPF55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

1.

Features

  • z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation.

📥 Download Datasheet

Datasheet preview – CJPF55P30

Datasheet Details

Part number CJPF55P30
Manufacturer JCET
File Size 1.24 MB
Description P-Channel MOSFET
Datasheet download datasheet CJPF55P30 Datasheet
Additional preview pages of the CJPF55P30 datasheet.

📁 Similar Datasheet

  • CJPF10N60 - N-Channel Power MOSFET (JIANGSU CHANGJIANG)
  • CJP02N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP03N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP04N20 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP06N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP07N20 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP10N60 - N-Channel Power MOSFET (JIANGSU CHANGJIANG)
  • CJP1117-1.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-1.8 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-2.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
Other Datasheets by JCET

Full PDF Text Transcription

Click to expand full text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF55P30 V(BR)DSS -55V P-Channel Power MOSFET RDS(on)MAX   40mΩ@-10V ID -30A TO-220F   DESCRIPTION The CJPF55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 1. GATE 2. DRAIN 3.
Published: |