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CJPF10N60 - N-Channel Power MOSFET

This page provides the datasheet information for the CJPF10N60, a member of the CJP10N60 N-Channel Power MOSFET family.

Description

The C JP10N60/CJPF10N60 is a high volt age and high current power MOSFET , design ed to ha ve c haracteristics, such as fast switching time, low gate charge, lo w on-st ate resist ance and have rugged avalanche characteristics.

Features

  • z Low Crss z Fast Switching z 100% avalanche tested 2.Drain TO-220-3L/TO-220F 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID 10 PD 2 RθJA 62.5 TJ Tstg -50 150 ~+150 Value 600 V ±30 A W ℃/W ℃ Unit C,Mar,2014 http://www. Datasheet4U. com Electrical charact.

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Datasheet Details

Part number CJPF10N60
Manufacturer JIANGSU CHANGJIANG
File Size 559.76 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJPF10N60 Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS CJP10N60,CJPF10N60 N-Channel Power MOSFET Description The C JP10N60/CJPF10N60 is a high volt age and high current power MOSFET , design ed to ha ve c haracteristics, such as fast switching time, low gate charge, lo w on-st ate resist ance and have rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES z Low Crss z Fast Switching z 100% avalanche tested 2.Drain TO-220-3L/TO-220F 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.
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