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CJPF08N65 - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

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Datasheet preview – CJPF08N65

Datasheet Details

Part number CJPF08N65
Manufacturer JCET
File Size 1.35 MB
Description N-Channel MOSFET
Datasheet download datasheet CJPF08N65 Datasheet
Additional preview pages of the CJPF08N65 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF08N65 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 650V 1.4Ω@10V 8A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE  High Current Rating  Lower RDS(on)  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche Energy Specified TO-220F 1. GATE 2. DRAIN 3.
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