Datasheet4U Logo Datasheet4U.com

CJPF05N60 - N-Channel MOSFET

Description

high energy in the avalanche mode and switch efficiently.

recovery time.

Features

  • z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified.

📥 Download Datasheet

Datasheet preview – CJPF05N60

Datasheet Details

Part number CJPF05N60
Manufacturer JCET
File Size 1.39 MB
Description N-Channel MOSFET
Datasheet download datasheet CJPF05N60 Datasheet
Additional preview pages of the CJPF05N60 datasheet.

📁 Similar Datasheet

  • CJPF10N60 - N-Channel Power MOSFET (JIANGSU CHANGJIANG)
  • CJP02N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP03N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP04N20 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP06N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP07N20 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP10N60 - N-Channel Power MOSFET (JIANGSU CHANGJIANG)
  • CJP1117-1.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-1.8 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-2.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
Other Datasheets by JCET

Full PDF Text Transcription

Click to expand full text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF05N60 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 600V   2.5Ω@10V 4.5A Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. TO-220F   1. GATE 2. DRAIN 3.
Published: |