2N7002T
FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
MARKING
K72
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
Equivalent Circuit
K72= Device Code Solid dot = Green molding pound device,if none, the normal device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
Drain-Source voltage
Gate-Source voltage
±20
Drain Current
Power Dissipation
115 m A
150 m W
RθJA Thermal Resistance from Junction to Ambient 833
Junction Temperature
℃/W ℃
Tstg
Storage Temperature
-55~+150 ℃
.cj-elec.
J,Sep,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source...
