2N7002KW
FEATURE z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected
M$5.,1-
APPLICATION z /RDG 6ZLWFK IRU 3RUWDEOH 'HYLFHV z '&'& &RQYHUWHU
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta=25Я unless otherwise noted)
Symbol VDS V- S ID IDM PD Tj Tstg RșJA
Parameter Drain-Source Voltage
- DWH-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Power Dissipation Junction Temperature Storage Temperature Thermal Resistance from Junction to Ambient
Value 60 ±0 340 800 0.2 150
-55~+150 625
Unit V V m A m A W Я Я
Я/W
ZZZFMHOHFFRP
IAug6
026)(7 (/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source Breakdown Voltage
V (BR) DSS VGS = 0V, ID =250μA
Gate Threshold Voltage (note 2)
VGS(th)
VDS =VGS, ID =1m A
Zero Gate Voltage Drain Current
IDSS
VDS =48V,VGS = 0V
Gate-Source Leakage...
