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RFL2N06L - N-Channel Power MOSFET

Description

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Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • 2A, 50V and 60V.
  • rDS(ON) = 0.950Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics Ordering Information PART NUMBER RFL2N06L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFL2N06L Data Sheet October 1999 File Number 1560.3 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9520. Features • 2A, 50V and 60V • rDS(ON) = 0.
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