Datasheet4U Logo Datasheet4U.com

RFL1N10L - N-Channel Power MOSFET

Description

This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.

Features

  • 1A, 100V.
  • rDS(ON) = 1.200Ω Ordering Information PART NUMBER RFL1N10L.

📥 Download Datasheet

📁 Similar Datasheet

  • RFLA1010 - HIGH-LINEARITY AMPLIFIER (RF Micro Devices)
  • RFLA1018 - VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER (RFMD)
  • RFLA1018S - High Linearity Amplifier (RF Micro Devices)
  • RFLA1022 - High Linearity Amplifier (RF Micro Devices)
  • RFLA1038 - Variable Gain Low Noise High Linearity Amplifier (RF Micro Devices)
  • RFLA2018 - Variable Gain Low Noise High Linearity Amplifier (RFMD)
  • RFLA9002 - Dual Low Noise Amplifier (RF Micro Devices)
  • RFLA9003 - Dual Low Noise Amplifier (RF Micro Devices)
  • RFLW3N1100B - High Frequency Wire Bondable RF Spiral Inductor (Vishay)
  • RFLW3N2000B - High Frequency Wire Bondable RF Spiral Inductor (Vishay)
Other Datasheets by Intersil Corporation

Full PDF Text Transcription

Click to expand full text
RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09524. Features • 1A, 100V • rDS(ON) = 1.200Ω Ordering Information PART NUMBER RFL1N10L PACKAGE TO-205AF BRAND RFL1N10L NOTE: When ordering, use the entire part number.
Published: |