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RFL1P08 - P-Channel Power MOSFET

Description

These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

  • 1A, -80V and -100V.
  • rDS(ON) = 3.65Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device Ordering Information PART NUMBER RFL1P08 RFL1P10.

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Full PDF Text Transcription (Reference)

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Semiconductor RFL1P08, RFL1P10 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9400. July 1998 Features • 1A, -80V and -100V • rDS(ON) = 3.
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