RFL1N18
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289.
January 1998
Features
- 1A, 180V and 200V
- r DS(ON) = 3.65Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
Symbol
Ordering Information
PART NUMBER RFL1N18 RFL1N20
PACKAGE TO-205AF TO-205AF
BRAND RFL1N18 RFL1N20
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-205AF
DRAIN (CASE) GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users...
