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HUF75652G3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. semi. Intersil. com.
  • Peak Current vs Pulse Width Curve DRAIN (TAB) HUF75652G3.
  • UIS Rating Curve Symbol D Ordering Information PART NUMBER HUF75652G3 G.

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Full PDF Text Transcription

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HUF75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Intersil.com • Peak Current vs Pulse Width Curve DRAIN (TAB) HUF75652G3 • UIS Rating Curve Symbol D Ordering Information PART NUMBER HUF75652G3 G PACKAGE TO-247 BRAND 75652G NOTE: When ordering, use the entire part number. S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75652G3 UNITS V V V A A 100 100 ±20 75 75 Figure 4 Figures 6, 17, 18 515 3.
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