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HUF75652G3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve DRAIN (TAB) HUF75652G3 Symbol D Ordering Information PART NUMBER.

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Full PDF Text Transcription

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HUF75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET® Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (TAB) HUF75652G3 Symbol D Ordering Information PART NUMBER PACKAGE TO-247 BRAND 75652G HUF75652G3 G NOTE: When ordering, use the entire part number. S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75652G3 UNITS V V V A A 100 100 ±20 75 75 Figure 4 Figure 6 515 3.44 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . .
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