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HGTG34N100E2 - N-Channel IGBT

Description

The HGTG34N100E2 is a MOS gated high voltage switching device combining the best

Features

  • 34A, 1000V.
  • Latch Free Operation.
  • Typical Fall Time - 710ns.
  • High Input Impedance.
  • Low Conduction Loss.

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Full PDF Text Transcription

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HGTG34N100E2 April 1995 34A, 1000V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features • 34A, 1000V • Latch Free Operation • Typical Fall Time - 710ns • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
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