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HGTG30N120D2 - N-Channel IGBT

Description

The HGTG30N120D2 is a MOS gated high voltage switching device combining the best

Features

  • 30A, 1200V.
  • Latch Free Operation.
  • Typical Fall Time - 580ns.
  • High Input Impedance.
  • Low Conduction Loss.

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Full PDF Text Transcription

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HGTG30N120D2 April 1995 30A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features • 30A, 1200V • Latch Free Operation • Typical Fall Time - 580ns • High Input Impedance • Low Conduction Loss Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
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