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HGTG24N60D1
May 1995
24A, 600V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
Features
• 24A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
HGTG24N60D1 Datasheet
