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HGTD8P50G1 - 8A/ 500V P-Channel IGBTs

Description

The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives.

Features

  • 8A, 500V.
  • 3.7V VCE(SAT).
  • Typical Fall Time - 1800ns.
  • High Input Impedance.
  • TJ = +150oC (FLANGE).

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Full PDF Text Transcription

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HGTD8P50G1, HGTD8P50G1S March 1997 8A, 500V P-Channel IGBTs Package JEDEC TO-251AA EMITTER COLLECTOR GATE Features • 8A, 500V • 3.7V VCE(SAT) • Typical Fall Time - 1800ns • High Input Impedance • TJ = +150oC (FLANGE) COLLECTOR Description The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and it is ideal for half bridge circuit configurations. These types can be operated directly from low power integrated circuits.
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