Click to expand full text
HGTD3N60A4S, HGTP3N60A4
Data Sheet August 2003
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49327.
Features
• >100kHz Operation at 390V, 3A • 200kHz Operation at 390V, 2.
HGTD3N60A4S Datasheet
