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HGTD6N50E1 - 6A/ 400V and 500V N-Channel IGBTs

Description

The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.

Features

  • 6A, 400V and 500V.
  • VCE(ON): 2.5V Max.
  • TFALL: 1.0µs.
  • Low On-State Voltage.
  • Fast Switching Speeds.
  • High Input Impedance.

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Full PDF Text Transcription

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HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 6A, 400V and 500V • VCE(ON): 2.5V Max. • TFALL: 1.0µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance Applications • Power Supplies • Motor Drives • Protective Circuits HGTD6N40E1S, HGTD6N50E1S JEDEC TO-252AA COLLECTOR (FLANGE) GATE EMITTER Description The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.
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