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HGTA32N60E2 - 32A/ 600V N-Channel IGBT

Description

The IGBT is a MOS gated high voltage switching device combining the best

Features

  • 32A, 600V.
  • Latch Free Operation.
  • Typical Fall Time 620ns.
  • High Input Impedance.
  • Low Conduction Loss.

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Full PDF Text Transcription

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HGTA32N60E2 April 1995 32A, 600V N-Channel IGBT Package JEDEC MO-093AA (5 LEAD TO-218) 5 EMITTER COLLECTOR (FLANGE) 4 EMITTER KELVIN 3 COLLECTOR 2 NO CONNECTION 1 GATE Features • 32A, 600V • Latch Free Operation • Typical Fall Time 620ns • High Input Impedance • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
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