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IRLU7843CPBF - POWER MOSFET

Download the IRLU7843CPBF datasheet PDF. This datasheet also covers the IRLR7843CPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR7843CPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU7843 HEXFET Power MOSFET
IRLU7843PBF HEXFET Power MOSFET
IRLU7807Z HEXFET Power MOSFET
IRLU7807ZPBF HEXFET Power MOSFET
IRLU7821 HEXFET Power MOSFET

Full PDF Text Transcription

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PD - 96058 IRLR7843CPbF IRLU7843CPbF Applications l l HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free VDSS 30V RDS(on) max 3.3m: Qg 34nC Benefits l l l Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRLR7843CPbF IRLU7843CPbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 161 113 620 140 71 0.95 -55 to + 175 300 (1.
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