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IRLU3705ZPBF - POWER MOSFET

Download the IRLU3705ZPBF datasheet PDF. This datasheet also covers the IRLR3705ZPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRLU3705ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3705ZPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3705Z AUTOMOTIVE MOSFET
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IRLU3714ZPBF HEXFET Power MOSFET
IRLU3715 SMPS MOSFET

Full PDF Text Transcription

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PD - 95956A IRLR3705ZPbF Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRLU3705ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
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