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IRLU3705Z - AUTOMOTIVE MOSFET

Download the IRLU3705Z datasheet PDF. This datasheet also covers the IRLR3705Z variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l IRLR3705Z IRLU3705Z HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3705Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3705ZPBF POWER MOSFET
IRLU3714 SMPS MOSFET
IRLU3714PbF SMPS MOSFET
IRLU3714ZPBF HEXFET Power MOSFET
IRLU3715 SMPS MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PD - 96896 AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l IRLR3705Z IRLU3705Z HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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