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IRLML5103TRPbF - HEXFET Power MOSFET

This page provides the datasheet information for the IRLML5103TRPbF, a member of the IRLML5103PbF HEXFET Power MOSFET family.

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Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRLML5103PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l RoHS Compliant, Halogen-Free HEXFET® Power MOSFET G 1 VDSS = -30V 3D S 2 RDS(on) = 0.60Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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