IRLML2246TR
Description
The IRLML2246TR uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a loads witch or in PWM applications.
3.Benefits
Multi-vendor patibility Easier manufacturing
2.Features
VDS (V)=-20V ID=2A RDS(ON)<135mΩ(VGS=-4.5V) RDS(ON)<236mΩ(VGS=-2.5V)
Environmentally friendly Increased reliability
4.Pinning information
Pin
Symbol Description
SOT-23
GATE
SOURCE
DRAIN
1 2
5.Maximum ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
TA=25°C TA=70°C
TA=25°C TA=70°C
Symbol VDS ID IDM PD
VGS TJ,TSTG
Value -20 -2.6 -2.1 -11 1.3 0.8 0.01 ±12
-55 to 150
Units V
W W/°C
V °C
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
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