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IRLIB9343PBF - HEXFET Power MOSFET

General Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications.

This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95745 DIGITAL AUDIO MOSFET IRLIB9343PbF Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Lead-Free l Key Parameters VDS RDS(ON) typ. @ VGS = -10V RDS(ON) typ. @ VGS = -4.5V Qg typ. TJ max D -55 93 150 31 175 V m: m: nC °C G S TO-220 Full-Pak Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.